1/10 sep 2000 STU10NC70Z STU10NC70Zi n-channel 700v - 0.58 w - 9.4a max220/i-max220 zener-protected powermesh?iii mosfet n typical r ds (on) = 0.58 w n extremely high dv/dt capability n gate-to-source zener diodes n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description the third generation of mesh overlay ? power mosfets for very high voltage exhibits unsur- passed on-resistance per unit area while integrating back-to-back zener diodes between gate and source. such arrangement gives extra esd capabil- ity with higher ruggedness performance as request- ed by a large variety of single-switch applications. applications n single-ended smps in monitors, computer and industrial application n welding equipment absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d STU10NC70Z STU10NC70Zi 700 v 700 v <0.75 w <0.75 w 9.4 a 9.4 a symbol parameter value unit STU10NC70Z STU10NC70Zi v ds drain-source voltage (v gs = 0) 700 v v dgr drain-gate voltage (r gs = 20 k w ) 700 v v gs gate- source voltage 25 v i d drain current (continuos) at t c = 25c 9.4 9.4(*) a i d drain current (continuos) at t c = 100c 5.9 5.9(*) a i dm (1) drain current (pulsed) 37.6 37.6(*) a p tot total dissipation at t c = 25c 160 55 w derating factor 1.28 0.44 w/c i gs gate-source current 50 ma v esd(g-s) gate source esd(hbm-c=100pf, r=15k w) 4kv dv/dt( l ) peak diode recovery voltage slope 3 v/ns v iso insulation winthstand voltage (dc) -- 2000 v t stg storage temperature C65 to 150 c t j max. operating junction temperature 150 c (1)i sd 9.4a, di/dt 100a/s, v dd v (br)dss , t j t jmax (*)limited only by maximum temperature allowed max220 i-max220 1 2 3
STU10NC70Z/STU10NC70Zi 2/10 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic max220 i-max220 rthj-case thermal resistance junction-case max 0.78 2.27 c/w rthj-amb thermal resistance junction-ambient max 30 c/w rthc-sink thermal resistance case-sink typ 0.1 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 9.4 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 400 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 700 v d bv dss / d t j breakdown voltage temp. coefficient i d = 1 ma, v gs = 0 1 v/c i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.3a 0.58 0.75 w i d(on) on state drain current v ds > i d(on) x r ds(on)max, v gs =10v 9.4 a symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds > i d(on) x r ds(on)max, i d =5.3a 13 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 3550 pf c oss output capacitance 250 pf c rss reverse transfer capacitance 30 pf
3/10 STU10NC70Z/STU10NC70Zi electrical characteristics (continued) switching on (resistive load) switching off (inductive load) source drain diode gate-source zener diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. d v bv = a t (25-t) bv gso (25) protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the devices esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the 25v zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the devices integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 350v, i d = 5.3a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 34 ns t r rise time 12 ns q g total gate charge v dd = 560v, i d = 10.6 a, v gs = 10v 72 100 nc q gs gate-source charge 19 nc q gd gate-drain charge 24 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 560v, i d = 10.6 a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 34 ns t f fall time 36 ns t c cross-over time 80 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 9.4 a i sdm (2) source-drain current (pulsed) 37.6 a v sd (1) forward on voltage i sd = 9.4 a, v gs = 0 1.6 v t rr reverse recovery time i sd = 10.6 a, di/dt = 100a/s, v dd = 100v, t j = 150c (see test circuit, figure 5) 660 ns q rr reverse recovery charge 8.7 c i rrm reverse recovery current 26 a symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 25 v a t voltage thermal coefficient t=25c note(3) 1.3 10 -4 /c rz dynamic resistance i gs = 50 ma, v gs = 0 90 w
STU10NC70Z/STU10NC70Zi 4/10 output characteristics safe operating area for i-max220 safe operating area for max220 thermal impedance for max220 thermal impedance for i-max220 transfer characteristics
5/10 STU10NC70Z/STU10NC70Zi gate charge vs gate-source voltage normalized on resistance vs temperature normalized gate threshold voltage vs temp. capacitance variations static drain-source on resistance transconductance
STU10NC70Z/STU10NC70Zi 6/10 source-drain diode forward characteristics
7/10 STU10NC70Z/STU10NC70Zi fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
STU10NC70Z/STU10NC70Zi 8/10 dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.2 2.4 0.087 0.094 a2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 d 15.9 16.3 0.626 0.641 d1 9 9.35 0.354 0.368 d2 0.8 1.2 0.031 0.047 d3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 e 10.05 10.35 0.396 0.407 l 13.2 13.6 0.520 0.535 l1 3 3.4 0.118 0.133 a a2 a1 c d3 d1 d2 d b1 b2 b e l l1 e p011r max220 mechanical data
9/10 STU10NC70Z/STU10NC70Zi dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.6 2.75 0.102 0.108 a2 1.95 2.15 0.077 0.084 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.017 0.023 d 15.9 16.3 0.626 0.641 d1 12.5 12.9 0.492 0.508 d2 0.6 1 0.023 0.039 d3 1.75 2.15 0.069 0.084 e 2.44 2.64 0.096 0.104 e 10.05 10.35 0.396 0.407 l 13.2 13.6 0.520 0.535 l1 3 3.4 0.118 0.133 p011s i-max220 mechanical data
STU10NC70Z/STU10NC70Zi 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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